GF2304 - N-Channel Enhancement-Mode MOSFET

General Semiconductor

Datasheet Details

Part number	GF2304
Manufacturer	General Semiconductor
File Size	96.34 KB
Description	N-Channel Enhancement-Mode MOSFET
Datasheet	GF2304-GeneralSemiconductor.pdf

Advanced trench process technology.
High density cell design for ultra-low on-resistance.
Popular SOT-23 package with copper lead-frame for superior thermal and electrical capabilities.
Compact and low profile Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage Gate-Source-Voltage Continuous Drain Current TJ = 150°C Pulsed Drain Current(1) Maximum Power Dissipation(2) TA = 25°C TA.

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Published: Mar 18, 2015 |