IDB31 Datasheet, Diode, General Semiconductor

IDB31 Features

• Diode ¨ Intend for use in triac and thyristors circuits ¨ VBO: 30V to 34V ¨ Excellent Breakover Voltage Symmetry: typ. 1% ¨ Low Breakover Current: 20µA typ. ¨ Marking: B31 ¨ Bidirectional Ope

PDF File Details

Part number:

IDB31

Manufacturer:

General Semiconductor

File Size:

144.71kb

Download:

📄 Datasheet

Description:

Planar silicon bidirectional trigger diode.

TAGS

IDB31

General Semiconductor

📁 Related Datasheet

IDB30E120 - Fast Switching Emitter Controlled Diode (Infineon Technologies)
Fast Switching Emitter Controlled Diode Feature • 1200 V Emitter Controlled technology • Fast recovery • Soft switching • Low reverse recovery charge .

IDB30E60 - Fast Switching Emitter Controlled Diode (Infineon Technologies)
FFaasstt SSwwiittcchhiinngg EEmmCittoenr DCioondterolled Diode Feature • 600VVEEmmitCteornCteocnhtrnoollleodgytechnology • Fast recovery • Soft switch.

IDB04E120 - Fast Switching EmCon Diode (Infineon Technologies)
IDP04E120 IDB04E120 Fast Switching EmCon Diode Feature • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge • Low .

IDB06E60 - Fast Switching EmCon Diode (Infineon Technologies)
IDP06E60 IDB06E60 Fast Switching EmCon Diode Feature • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge • Low for.

IDB06S60C - 2nd Generation thinQ SiC Schottky Diode (Infineon Technologies)
IDB06S60C 2ndGeneration thinQ TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark .

IDB09E120 - Fast Switching EmCon Diode (Infineon Technologies)
IDP09E120 IDB09E120 Fast Switching EmCon Diode Feature • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge • Low .

IDB09E60 - Fast Switching EmCon Diode (Infineon Technologies)
IDP09E60 IDB09E60 Fast Switching EmCon Diode Feature • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge • Low for.

IDB10S60C - 2nd Generation thinQ SiC Schottky Diode (Infineon Technologies)
IDB10S60C 2nd Generation thinQ TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark.

IDB12E120 - Fast Switching EmCon Diode (Infineon Technologies)
IDP12E120 IDB12E120 Fast Switching EmCon Diode Feature • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge • Low .

IDB15E60 - Fast Switching EmCon Diode (Infineon Technologies)
IDP15E60 IDB15E60 Fast Switching EmCon Diode Feature • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge • Low for.