IDB10S60C 2nd Generation thinQ SiC Schottky Diode

Infineon Technologies

Description

IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode .

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Datasheet Specifications

Part number: IDB10S60C
Manufacturer: Infineon ↗ Technologies
File Size: 320.51 KB
Datasheet: IDB10S60C_InfineonTechnologies.pdf
Description: 2nd Generation thinQ SiC Schottky Diode

Features

* Revolutionary semiconductor material - Silicon Carbide
* Switching behavior benchmark
* No reverse recovery/ No forward recovery
* No temperature influence on the switching behavior
* High surge current capability
* Pb-free lead plating; RoHs complia

Applications

* Breakdown voltage tested at 5mA2) thinQ! 2G Diode designed for fast switching applications like:
* CCM PFC
* Motor Drives Type IDB10S60C Package D2PAK Marking D10S60C Pin 2 C Pin 3 A Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous forward c

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IDB10S60C 2nd Generation thinQ SiC Schottky Diode Infineon Technologies

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