IDB10S60C Datasheet - Infineon Technologies

IDB10S60C 2nd Generation thinQ SiC Schottky Diode

IDB10S60C Features

* Revolutionary semiconductor material - Silicon Carbide

* Switching behavior benchmark

* No reverse recovery/ No forward recovery

* No temperature influence on the switching behavior

* High surge current capability

* Pb-free lead plating; RoHs complia

Datasheet Details

IDB10S60C

Infineon ↗ Technologies

320.51 KB

2nd generation thinq sic schottky diode.

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