IDB10S60C - 2nd Generation thinQ SiC Schottky Diode

Infineon Technologies

Datasheet Details

Part number	IDB10S60C
Manufacturer	Infineon Technologies
File Size	320.51 KB
Description	2nd Generation thinQ SiC Schottky Diode
Datasheet	IDB10S60C_InfineonTechnologies.pdf

Revolutionary semiconductor material - Silicon Carbide.
Switching behavior benchmark.
No reverse recovery/ No forward recovery.
No temperature influence on the switching behavior.
High surge current capability.
Pb-free lead plating; RoHs compliant www. DataSheet4U. net Product Summary V DC Qc IF 600 24 10 V nC A D2PAK.
Qualified according to JEDEC1) for target.

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Published: Jul 7, 2011 |