MFIRF10N65 POWER MOSFET

Global Semiconductor

Description

MFIRF10N65 MCIRF10N65 ID = 10A VDS = 650V RDS(on)MAX = 0.8Ω Major Ratings and Characteristics Characteristics Values Units ID 10 A IDM 40 A VDS .
Features The MFIRF10N65 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over tim.

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Datasheet Specifications

Part number: MFIRF10N65
Manufacturer: Global Semiconductor
File Size: 612.74 KB
Datasheet: MFIRF10N65-GlobalSemiconductor.pdf
Description: POWER MOSFET

Applications

* are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection.
* 150℃ Tj operation
* Low Power Loss & Low cost
* Fast Switching
* RoHS Compliant Case Styles Ordering Information Part Number MCIRF10N65 MFIRF10N65 1、 GATE 2、 DRAIN 3、 SOURCE Package

MFIRF10N65 Distributors

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MFIRF10N65 POWER MOSFET Global Semiconductor

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