MFIRF7N60 POWER MOSFET

Global Semiconductor

Description

MFIRF7N60 MCIRF7N60 POWER MOSFET ID = 7.0A VDS = 600V RDS(on)MAX = 1.2Ω .
Features The MCIRF7N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

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Datasheet Specifications

Part number: MFIRF7N60
Manufacturer: Global Semiconductor
File Size: 586.75 KB
Datasheet: MFIRF7N60-GlobalSemiconductor.pdf
Description: POWER MOSFET

Applications

* are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. 150℃ Tj operation
* Low Power Loss & Low cost
* Fast Switching
* RoHS Compliant
* Major Ratings and Characteristics Characteristics ID IDM VDS VGS TJ T storage Values 7.0 28.0 600 ±30 15

MFIRF7N60 Distributors

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MFIRF7N60 POWER MOSFET Global Semiconductor

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