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GPT02N50 Datasheet - Greatpower

GPT02N50 - POWER FIELD EFFECT TRANSISTOR

GPT02N50 Features

* This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, converte

GPT02N50-Greatpower.pdf

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Datasheet Details

Part number:

GPT02N50

Manufacturer:

Greatpower

File Size:

1.38 MB

Description:

Power field effect transistor.

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