Part number:
GPT02N60
Manufacturer:
Greatpower
File Size:
364.31 KB
Description:
Power field effect transistor.
GPT02N60 Datasheet (364.31 KB)
* This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, converte
GPT02N60 Datasheet (364.31 KB)
GPT02N60
Greatpower
364.31 KB
Power field effect transistor.
📁 Related Datasheet
GPT02N60A - POWER FIELD EFFECT TRANSISTOR
(Greatpower)
GPT02N60A
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This advanced high voltage MOSFET is designed to withstand high energy in the .
GPT02N65 - POWER FIELD EFFECT TRANSISTOR
(Greatpower)
GENERAL DESCRIPTION
GPT02N65
POWER FIELD EFFECT TRANSISTOR
FEATURES
This advanced high voltage MOSFET is designed to withstand high energy in the av.
GPT02N65A - POWER FIELD EFFECT TRANSISTOR
(Greatpower)
GENERAL DESCRIPTION
GPT02N65A
POWER FIELD EFFECT TRANSISTOR
FEATURES
This advanced high voltage MOSFET is designed to withstand high energy in the a.
GPT02N50 - POWER FIELD EFFECT TRANSISTOR
(Greatpower)
GENERAL DESCRIPTION
GPT02N50
POWER FIELD EFFECT TRANSISTOR
FEATURES
This advanced high voltage MOSFET is designed to withstand high energy in the av.
GPT02N50A - POWER FIELD EFFECT TRANSISTOR
(Greatpower)
GENERAL DESCRIPTION
GPT02N50A
POWER FIELD EFFECT TRANSISTOR
FEATURES
This advanced high voltage MOSFET is designed to withstand high energy in the a.
GPT02N70 - POWER FIELD EFFECT TRANSISTOR
(Greatpower)
GPT02N70
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This advanced high voltage MOSFET is designed to withstand high energy in the a.
GPT02N70A - POWER FIELD EFFECT TRANSISTOR
(Greatpower)
GPT02N70A
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This advanced high voltage MOSFET is designed to withstand high energy in the .
GPT01N65A - POWER FIELD EFFECT TRANSISTOR
(Greatpower)
GENERAL DESCRIPTION
GPT01N65A
POWER FIELD EFFECT TRANSISTOR
FEATURES
This high voltage MOSFET uses an advanced termination scheme to provide enhance.
