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GPT07N50 POWER FIELD EFFECT TRANSISTOR

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Description

GENERAL .
GPT07N50 POWER FIELD EFFECT TRANSISTOR FEATURES This advanced high voltage MOSFET is designed to withstand Higher Current Rating high energy in th.

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Datasheet Specifications

Part number
GPT07N50
Manufacturer
Greatpower
File Size
1.37 MB
Datasheet
GPT07N50-Greatpower.pdf
Description
POWER FIELD EFFECT TRANSISTOR

Features

* This advanced high voltage MOSFET is designed to withstand Higher Current Rating high energy in the avalanche mode and switch efficiently. This Lower Rds(on) new high energy device also offers a drain-to-source diode Lower Capacitances with fast recovery time. Designed for high voltage, high

Applications

* such as power supplies, converters, Tighter VSD Specifications power motor controls and bridge circuits. Avalanche Energy Specified PIN CONFIGURATION SYMBOL TO-220/TO-220FP Top View TO-251 Front View TO-252 Front View D GATE DRAIN SOURCE GATE DRAIN SOURCE G 12 3 123 S N-Channel MOSFET

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