GPT18N50CD, GPT18N50C POWER FIELD EFFECT TRANSISTOR

Description

GPT18N50C / GPT18N50CD POWER FIELD EFFECT TRANSISTOR GENERAL .
FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capabil.

📥 Download Datasheet

GPT18N50CD Datasheet Preview — This datasheet PDF includes multiple part numbers: GPT18N50CD, GPT18N50C. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: GPT18N50CD, GPT18N50C
Manufacturer: Greatpower
File Size: 1.46 MB
Datasheet: GPT18N50C-Greatpower.pdf
Description: POWER FIELD EFFECT TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: GPT18N50CD, GPT18N50C.
Please refer to the document for exact specifications by model.

Features

* This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFE

Applications

* in power supplies, converters and Ciss improvement PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are cri

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GPT18N50C POWER FIELD EFFECT TRANSISTOR Greatpower

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