GPT21N50 POWER FIELD EFFECT TRANSISTOR

Description

GPT21N50 / GPT21N50D POWER FIELD EFFECT TRANSISTOR GENERAL .
FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capabil.

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Datasheet Specifications

Part number: GPT21N50
Manufacturer: Greatpower
File Size: 1.46 MB
Datasheet: GPT21N50-Greatpower.pdf
Description: POWER FIELD EFFECT TRANSISTOR

Features

* This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFE

Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer add

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GPT21N50 POWER FIELD EFFECT TRANSISTOR Greatpower

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