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2SJ325 Datasheet - Guangdong Kexin Industrial

2SJ325 MOS Field Effect Power Transistors

2SJ325 Features

* Low on-state resistance RDS(on)=83m RDS(on)=0.15 (VGS=-10V,ID=-2A) +0.15 5.55-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 IC MOSFET TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm +0.2 9.70-0.2 +0.1 0.80-0.1 +0.15 0.50-0.15 Built-in G-S Gate Protection Diode 0.127 max +0.28 1.50-0.1 +0.

2SJ325 Datasheet (107.26 KB)

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Datasheet Details

Part number:

2SJ325

Manufacturer:

Guangdong Kexin Industrial

File Size:

107.26 KB

Description:

Mos field effect power transistors.

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2SJ325 MOS Field Effect Power Transistors Guangdong Kexin Industrial

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