2SJ325 - MOS Field Effect Power Transistors

Guangdong Kexin Industrial

Datasheet Details

Part number	2SJ325
Manufacturer	Guangdong Kexin Industrial
File Size	107.26 KB
Description	MOS Field Effect Power Transistors
Datasheet	2SJ325_GuangdongKexinIndustrial.pdf

Low on-state resistance RDS(on)=83m RDS(on)=0.15 (VGS=-10V,ID=-2A) +0.15 5.55-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 IC MOSFET TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm +0.2 9.70-0.2 +0.1 0.80-0.1 +0.15 0.50-0.15 Built-in G-S Gate Protection Diode 0.127 max +0.28 1.50-0.1 +0.25 2.65-0.1 1 Gate 2 Drain 3 Source 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage (DC) Gate to source voltage (AC) Dra.

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Published: Nov 23, 2011 |