2SJ321 Datasheet - Hitachi

2SJ321 - Silicon P Channel MOS FET

2SJ321 Features

* Low on-resistance

* High speed switching

* Low drive current

* 4 V gate drive device can be driven from 5 V source

* Suitable for switching regulator, DC-DC converter

* Avalanche ratings Outline TO-220CFM D 12 3 1. Gate G 2. Drain 3. Source S Novemb

Datasheet Details

2SJ321

Hitachi

29.71 KB

Silicon p channel mos fet.

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