Datasheet4U.com

2SJ321 - Silicon P Channel MOS FET

Product Overview

Hitachi

📥 Download Datasheet

2SJ321 Silicon P Channel MOS FET by Hitachi - Datasheet Preview — Datasheet preview – 2SJ321

Datasheet Details

Part number	2SJ321
Manufacturer	Hitachi
File Size	29.71 KB
Description	Silicon P Channel MOS FET
Datasheet	2SJ321 Datasheet
Additional preview pages of the 2SJ321 datasheet.

Product details

Features

Low on-resistance.
High speed switching.
Low drive current.
4 V gate drive device can be driven from 5 V source.
Suitable for switching regulator, DC-DC converter.
Avalanche ratings Outline TO-220CFM D 12 3 1. Gate G 2. Drain 3. Source S November 1996 2SJ321 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current.

📁 Similar Datasheet

2SJ320 - P-Channel MOSFET (Sanyo Semicon Device)
2SJ324 - P-Channel MOSFET (NEC)
2SJ325 - P-Channel MOSFET (NEC)
2SJ326 - P-Channel MOSFET (NEC)
2SJ326-Z - P-Channel MOSFET (NEC)
2SJ327 - P-Channel MOSFET (NEC)
2SJ327-Z - P-Channel MOSFET (NEC)
2SJ327-Z-E1 - P-Channel MOSFET (VBsemi)

Other Datasheets by Hitachi

2SJ122 - Silicon P-Channel MOSFET
2SJ176 - SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING
2SJ177 - Silicon P-Channel MOSFET
2SJ220 - Silicon P-Channel MOS FET
2SJ220L - Silicon P-Channel MOS FET
2SJ220S - Silicon P-Channel MOS FET

Published: Nov 20, 2016 |