Hitachi Datasheet | Specifications & PDF Download

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HRW0202B Silicon Schottky Barrier Diode for Rectifying ADE-208-345A (Z) Rev 1 Oct. 1997 Features • Low forward voltage drop and suitable for high eff

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2SJ117 Silicon P-Channel MOS FET ADE-208-1180 (Z) 1st. Edition Mar. 2001 Application www.DataSheet4U.com High speed power switching Features • • •

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www.DataSheet.co.kr CONTROLLED AVALANCHE DIODE V07 FEATURES • Transient surge voltage protection. • Diffused-junction. Glass passivated and encapsul

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HA17324/A Series Quad Operational Amplifier ADE-204-031 (Z) 1st Edition Apr. 2000 Description HA17324 series and HA17324A series are quad operational

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1SS106 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching Features • Detection efficiency is very good. • Small temperature co

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www.DataSheet4U.com 2SK1095 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features • • • • Low on-resistance High spee

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1SS270A Silicon Epitaxial Planar Diode for High Speed Switching REJ03G0567-0400 Rev.4.00 Sep 29, 2008 Features • Low capacitance. (C = 3.0 pF max) • S

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LM044L • 20 Character x 4 lines • Built-in control LSI HD44780 type (see page 23) • +5V single power supply MECHANICAL DATA (Nominal dimensions) Mo

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