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2SK3481 - MOSFET

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Features

  • Super low on-state resistance: RDS(on)1 = 50 m RDS(on)2 = 58 m MAX. (VGS = 10 V, ID = 15A) +0.2 8.7-0.2 +0.1 1.27-0.1 www. DataSheet4U. com MOSFET Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 MAX. (VGS = 4.5 V, ID = 15 A) +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 Low Ciss: Ciss = 2300 pF TYP. +0.2 5.28-0.2 Built-in gate protection diode 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 +0.2 15.25-0.2 +0.2 2.54-0.2 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltag.

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Datasheet Details

Part number 2SK3481
Manufacturer Guangdong Kexin Industrial
File Size 64.24 KB
Description MOSFET
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SMD Type MOS Field Effect Transistor 2SK3481 TO-263 Features Super low on-state resistance: RDS(on)1 = 50 m RDS(on)2 = 58 m MAX. (VGS = 10 V, ID = 15A) +0.2 8.7-0.2 +0.1 1.27-0.1 www.DataSheet4U.com MOSFET Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 MAX. (VGS = 4.5 V, ID = 15 A) +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 Low Ciss: Ciss = 2300 pF TYP. +0.2 5.28-0.2 Built-in gate protection diode 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 +0.2 15.25-0.2 +0.2 2.54-0.2 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 100 20 30 60 56 1.
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