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HM12N60F

600V N-Channel MOSFET

HM12N60F Features

* 12.0A, 600V, RDS(on) = 0.65Ω @VGS = 10 V

* Low gate charge ( typical 52nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability {D GDS TO-220 GD S TO-220F

* ◀▲ {G

* {S Absolute Maximum Ratings TC

HM12N60F General Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices ar.

HM12N60F Datasheet (316.76 KB)

Preview of HM12N60F PDF

Datasheet Details

Part number:

HM12N60F

Manufacturer:

H&M Semiconductor

File Size:

316.76 KB

Description:

600v n-channel mosfet.

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HM12N60F 600V N-Channel MOSFET H&M Semiconductor

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