HM12N60F
H&M Semiconductor
316.76kb
600v n-channel mosfet. This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially ta
TAGS
📁 Related Datasheet
HM12N60 - 600V N-Channel MOSFET
(H&M Semiconductor)
HM12N60 / HM12N60F
600V N-Channel MOSFET
General Description
This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. Th.
HM12N02D - N-Channel Enhancement Mode Power MOSFET
(H&M Semiconductor)
DFNWB2X2-6L-J Plastic-Encapsulate MOSFETS
HM12N02D N-Channel MOSFET
V(BR)DSS
20V
RDS(on)MAX
11mΩ@ 4.5V
13mΩ@ 2.5V 16 mΩ@1.8V 22mΩ@1.5V 41mΩ@1.
HM12 - Output Toroidal Inductors
(Bi technologies)
..
MODEL HM12 SERIES
Output Toroidal Inductors with Mounting Base
FEATURES
• High performance powdered iron cores for excellent en.
HM1-6504883 - 4096 x 1 CMOS RAM
(Intersil Corporation)
HM-6504/883
March 1997
4096 x 1 CMOS RAM
Description
The HM-6504/883 is a 4096 x 1 static CMOS RAM fabricated using self-aligned silicon gate technol.
HM1-6504B883 - 4096 x 1 CMOS RAM
(Intersil Corporation)
HM-6504/883
March 1997
4096 x 1 CMOS RAM
Description
The HM-6504/883 is a 4096 x 1 static CMOS RAM fabricated using self-aligned silicon gate technol.
HM1-6508883 - 1024 x 1 CMOS RAM
(Intersil Corporation)
HM-6508/883
March 1997
1024 x 1 CMOS RAM
Description
The HM-6508/883 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technol.
HM1-6508B883 - 1024 x 1 CMOS RAM
(Intersil Corporation)
HM-6508/883
March 1997
1024 x 1 CMOS RAM
Description
The HM-6508/883 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technol.
HM1-6514-9 - 1024 x 4 CMOS RAM
(Intersil Corporation)
HM-6514
March 1997
1024 x 4 CMOS RAM
Description
The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The.
HM1-6514B-9 - 1024 x 4 CMOS RAM
(Intersil Corporation)
HM-6514
March 1997
1024 x 4 CMOS RAM
Description
The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The.
HM1-6514S-9 - 1024 x 4 CMOS RAM
(Intersil Corporation)
HM-6514
March 1997
1024 x 4 CMOS RAM
Description
The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The.