HM12N65F Datasheet | H&M Semiconductor

HM12N65 / HM12N65F HM12N65 / HM12N65F 650V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency sw itched mode power supp lies, active power factor corr ection based on half br idge topology. Features - 12.0A, 650V, RDS(on) = 0.75Ω @VGS = 10 V - Low gate charge ( typical 52n C) - High ruggedness - Fast wsitching - 100% avalanche tested - Improved dv/dt capability {D TO-220 GD S TO-220F - ◀▲ {G - -...