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HM12N65F Datasheet 650v N-channel MOSFET

Manufacturer: H&M Semiconductor

Overview: HM12N65 / HM12N65F HM12N65 / HM12N65F 650V N-Channel MOSFET General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and mutation mode.

These devices are well suited for high efficiency sw itched mode power supp lies, active power factor corr ection based on half br idge topology.

Key Features

  • 12.0A, 650V, RDS(on) = 0.75Ω @VGS = 10 V.
  • Low gate charge ( typical 52nC).
  • High ruggedness.
  • Fast wsitching.
  • 100% avalanche tested.
  • Improved dv/dt capability {D GDS TO-220 GD S TO-220F.
  • ◀▲ {G.
  • {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS G.

More Datasheets from H&M Semiconductor

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HM12N65F Distributor