HM12N60 Overview
HM12N60-VB Datasheet /$IBOOFM657 %4 4VQFS+VODUJPO Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 700 VGS = 10 V 0.5 Single TO-220AB.
HM12N60 Key Features
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
