HM12N60 Datasheet and Specifications PDF

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching .

* 12.0A, 600V, RDS(on) = 0.65Ω @VGS = 10 V
* Low gate charge ( typical 52nC)
* High ruggedness
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability {D GDS TO-220 GD S TO-220F
* ◀▲ {G
*
* {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drai.

HM12N60-VB HM12N60-VB Datasheet /$IBOOFM
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+VODUJPO Power MOSFET
PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuratio.

* Low figure-of-merit (FOM) Ron x Qg
* Low input capacitance (Ciss)
* Reduced switching and conduction losses
* Ultra low gate charge (Qg)
* Avalanche energy rated (UIS) APPLICATIONS
* Server and telecom power supplies
* Switch mode power supplies (SMPS)
* Power factor correction power supplies (PFC.