HM12N60F Datasheet | H&M Semiconductor

HM12N60 / HM12N60F 600V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features - 12.0A, 600V, RDS(on) = 0.65Ω @VGS = 10 V - Low gate charge ( typical 52n C) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability {D TO-220 GD S TO-220F - ◀▲ {G - -...