HM12N60F Overview
Description
This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- 12.0A, 600V, RDS(on) = 0.65Ω @VGS = 10 V
- Low gate charge ( typical 52nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
