HM18N50A - 500V N-Channel MOSFET

H&M Semiconductor

Datasheet Details

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

- 18A, 500V, RDS(on)typ. = 236mΩ@VGS = 10 V - Low gate charge ( typical 69nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-3P GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy.

📁 HM18N50A Similar Datasheet

Other Datasheets by H&M Semiconductor

Published: Jul 1, 2025 |