HM18N50A
Description
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features
- 18A, 500V, RDS(on)typ. = 236mΩ@VGS = 10 V
- Low gate charge ( typical 69n C)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
TO-3P
TO-220F
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS
IDM VGSS EAS IAR EAR dv/dt
TJ, TSTG
Parameter
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25℃)
- Continuous (TC = 100℃)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive...
