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HM18N50F Datasheet 500v N-channel MOSFET

Manufacturer: H&M Semiconductor

Overview: HM18N50A / HM18N50F 500V N-Channel MOSFET General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

Key Features

  • - 18A, 500V, RDS(on)typ. = 236mΩ@VGS = 10 V - Low gate charge ( typical 69nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-3P GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy.

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HM18N50F Distributor