HM2807D N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM2807D N-Channel Enhancement Mode Power MOSFET .
The HM2807D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: HM2807D
Manufacturer: H&M Semiconductor
File Size: 479.91 KB
Datasheet: HM2807D-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 100V,ID =100A RDS(ON) < 11mΩ @ VGS=10V (Typ:9.9mΩ)
* Special process technology for high ESD capability
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package

HM2807D Distributors

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HM2807D N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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