HM2800D
HM2800D is N-Channel Enhancement Mode Power MOSFET manufactured by H&M Semiconductor.
N-Channel Enhancement Mode Power MOSFET
Description
The HM2800D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application.
General Features
- VDS = 20V,ID = 5.0A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V
- High power and current handing capability
- Lead free product is acquired
- Surface mount package
D1
D2
G1
G2
S1
S2
Schematic diagram
DFN 2x2 Package S1 G1 D2
Pin 1
Application
- Battery protection
- Load switch
- Power management
Pin 1 Top
D1 G2 S2 Bottom
Package Marking and Ordering Information
Device Marking
Device
Device Package
DFN2X2-6L
Reel Size Ø180mm
Tape width 8...
