HM2807D
HM2807D is N-Channel Enhancement Mode Power MOSFET manufactured by H&M Semiconductor.
N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The HM2807D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL Features
- VDS = 100V,ID =100A RDS(ON) < 11mΩ @ VGS=10V (Typ:9.9mΩ)
- Special process technology for high ESD capability
- High density cell design for ultra low Rdson
- Fully characterized Avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
Schematic diagram
Application
- Power switching application
- Hard Switched and High Frequency Circuits
- Uninterruptible Power Supply
Marking and pin assignment
100% UIS TESTED! 100% ΔVds TESTED!
TO-263-2L top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
TO-263-2L
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