HM3808 - N-Channel MOSFET

H&M Semiconductor

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Datasheet Details

Part number	HM3808
Manufacturer	H&M Semiconductor
File Size	928.67 KB
Description	N-Channel MOSFET
Datasheet	HM3808-HMSemiconductor.pdf

HM3808 Product details

Description

HM3808 Marking and pin Assignment TO-220-3L top view Package Marking and Ordering Information Device Marking HM3808 Device HM3808 Device Package TO-220-3L Reel Size - Tape width - Page 1 Shenzhen H&M Semiconductor Co.Ltd http：//www.hmsemi.com Quantity - +0 9'6／9 6／$,' 1&KDQQHO(QKD QFHPHQW 0RGH026)(7 Electrical Characteristics of CP Test (TA=25°C unless otherwise noted) Symbol Parameter Test Conditions Min.Typ

Features

VDSS=80V／VGSS=±25V／ID=150A RDS(ON)=5mΩ(max. )@VGS=10V.
Low Dense Cell Design.
Reliable and Rugged.
Advanced trench process technology .

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Published: Jul 1, 2025 |