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HM4N10PR N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

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Description

N-Channel Enhancement Mode Power MOSFET .
The HM4N10PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: HM4N10PR
Manufacturer: H&M Semiconductor
File Size: 487.56 KB
Datasheet: HM4N10PR-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 100V,ID = 4A RDS(ON)

HM4N10PR Distributors

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HM4N10PR N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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