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HM4N65 - 650V N-Channel MOSFET

H&M Semiconductor

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Datasheet Details

Part number	HM4N65
Manufacturer	H&M Semiconductor
File Size	416.61 KB
Description	650V N-Channel MOSFET
Datasheet	HM4N65-HMSemiconductor.pdf

HM4N65 Product details

Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

Features

4.0A, 650V, RDS(on) = 3.0 @VGS = 10 V.
Low gate charge ( typical 15nC).
High ruggedness.
Fast wsitching.
100% avalanche tested.
Improved dv/dt capability Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2).

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Published: Jul 1, 2025 |