HM4N65 650V N-Channel MOSFET

H&M Semiconductor

Description

HM4N65 / HM4N65F HM4N65 / HM4N65F 650V N-Channel MOSFET General .
This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

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Datasheet Specifications

Part number: HM4N65
Manufacturer: H&M Semiconductor
File Size: 416.61 KB
Datasheet: HM4N65-HMSemiconductor.pdf
Description: 650V N-Channel MOSFET

Features

* 4.0A, 650V, RDS(on) = 3.0 @VGS = 10 V
* Low gate charge ( typical 15nC)
* High ruggedness
* Fast wsitching
* 100% avalanche tested
* Improved dv/dt capability Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-

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HM4-6514-B HM4-6516-9 HM4-65162-9 HM4-65162B-9 HM4-65162C-9 HM4-65642883

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HM4N65 650V N-Channel MOSFET H&M Semiconductor

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