This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.
This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode.
These devic
HM4N65F Features
* 4.0A, 650V, RDS(on) = 3.0 @VGS = 10 V
* Low gate charge ( typical 15nC)
* High ruggedness
* Fast wsitching
* 100% avalanche tested
* Improved dv/dt capability Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-
Datasheet Details
HM4N65F, HM4N65
H&M Semiconductor
416.61 KB
650v n-channel mosfet.
This datasheet PDF includes multiple part numbers: HM4N65F, HM4N65.
Please refer to the document for exact specifications by model.
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