HM50P03D Datasheet - H&M Semiconductor

HM50P03D P-Channel Enhancement Mode Power MOSFET

HM50P03D Features

* VDS =-30V,ID =-50A RDS(ON) < 7mΩ @ VGS=-10V

* High density cell design for ultra low Rdson

* Fully characterized avalanche voltage and current

* Good stability and uniformity with high EAS

* Excellent package for good heat dissipation

* Special process technology for high E

Datasheet Details

HM50P03D

H&M Semiconductor

360.11 KB

P-channel enhancement mode power mosfet.

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