HM60N03 N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM60N03 N-Channel Enhancement Mode Power MOSFET .
The HM60N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: HM60N03
Manufacturer: H&M Semiconductor
File Size: 677.66 KB
Datasheet: HM60N03-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS =30V,ID =60A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 13mΩ @ VGS=4.5V Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation

HM60N03 Distributors

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HM60N03 N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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