HM60N03 Datasheet - H&M Semiconductor

HM60N03, N-Channel Enhancement Mode Power MOSFET

HM60N03 N-Channel Enhancement Mode Power MOSFET .
The HM60N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

datasheet Preview Page 1 from Datasheet4u.com

HM60N03-HMSemiconductor.pdf

HM60N03 Datasheet Preview — Preview of HM60N03 PDF

Datasheet Details

Part number:

HM60N03

Manufacturer:

H&M Semiconductor

File Size:

677.66 KB

Description:

N-Channel Enhancement Mode Power MOSFET

Features

* VDS =30V,ID =60A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 13mΩ @ VGS=4.5V Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation

HM60N03 Distributors

📁 Related Datasheet

HM60 HM6-6617B883 HM6-6642-9 HM6-6642B-9 HM6116 HM6147H

📌 All Tags

HM60N03 N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

H&M Semiconductor HM60N03-like datasheet