HM60N03K
DESCRIPTION
The HM60N03K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATURES
- VDS =30V,ID =60A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 13mΩ @ VGS=4.5V
- High density cell design for ultra low Rdson
- Fully characterized Avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
Schematic diagram
H&M SEMI
HM1K
Application
- Power switching application
- Hard Switched and High Frequency Circuits
- Uninterruptible Power Supply
Marking and pin Assignment
100% UIS TESTED!
TO-252-2L top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
TO-252-2L
- -
- Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source...
