HM640 - N-channel Enhanced VDMOSFET

H&M Semiconductor

HM640 Datasheet Preview — Preview of HM640 PDF

Datasheet Details

Part number	HM640
Manufacturer	H&M Semiconductor
File Size	923.08 KB
Description	N-channel Enhanced VDMOSFET
Datasheet	HM640-HMSemiconductor.pdf

HM640 Product details

Description

HM640, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-220AB, which accords with the RoHS standard.

Features

l Fast Switching l Low ON Resistance(Rdson≤0.18Ω) l Low Gate Charge (Typical Data:24nC) l Low Reverse transfer capacitances(Typical:25pF) l 100% Single Pulse avalanche energy Test.

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Published: Dec 24, 2016 |