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HM640

N-channel Enhanced VDMOSFET

HM640 Features

* l Fast Switching l Low ON Resistance(Rdson≤0.18Ω) l Low Gate Charge (Typical Data:24nC) l Low Reverse transfer capacitances(Typical:25pF) l 100% Single Pulse avalanche energy Test Applications： CRT、TV/Monitor and Lighting. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS I

HM640 General Description

HM640, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and hig.

HM640 Datasheet (923.08 KB)

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Datasheet Details

Part number:

HM640

Manufacturer:

H&M Semiconductor

File Size:

923.08 KB

Description:

N-channel enhanced vdmosfet.

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TAGS

HM640 N-channel Enhanced VDMOSFET H&M Semiconductor

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