HM640 Datasheet - H&M Semiconductor

HM640 N-channel Enhanced VDMOSFET

HM640, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and hig.

HM640 Features

* l Fast Switching l Low ON Resistance(Rdson≤0.18Ω) l Low Gate Charge (Typical Data:24nC) l Low Reverse transfer capacitances(Typical:25pF) l 100% Single Pulse avalanche energy Test Applications： CRT、TV/Monitor and Lighting. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS I

HM640-HMSemiconductor.pdf