HM6401 - P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Datasheet Details

Part number	HM6401
Manufacturer	H&M Semiconductor
File Size	750.65 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	HM6401-HMSemiconductor.pdf

The HM6401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

VDS = -30V,ID = -5.0A RDS(ON) < 130mΩ @ VGS=-2.5V RDS(ON) < 75mΩ @ VGS=-4.5V RDS(ON) < 65mΩ @ VGS=-10V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package D G S Schematic diagram Marking and pin Assignment.

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Published: Nov 27, 2018 |