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HM6401 P-Channel Enhancement Mode Power MOSFET

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Description

HM6401 P-Channel Enhancement Mode Power MOSFET .
The HM6401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number
HM6401
Manufacturer
H&M Semiconductor
File Size
750.65 KB
Datasheet
HM6401-HMSemiconductor.pdf
Description
P-Channel Enhancement Mode Power MOSFET

Features

* VDS = -30V,ID = -5.0A RDS(ON) < 130mΩ @ VGS=-2.5V RDS(ON) < 75mΩ @ VGS=-4.5V RDS(ON) < 65mΩ @ VGS=-10V
* High Power and current handing capability
* Lead free product is acquired

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