HM65P03D P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM65P03D P-Channel Enhancement Mode Power MOSFET .
The HM65P03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: HM65P03D
Manufacturer: H&M Semiconductor
File Size: 553.21 KB
Datasheet: HM65P03D-HMSemiconductor.pdf
Description: P-Channel Enhancement Mode Power MOSFET

Features

* VDS =-30V,ID =-65A RDS(ON) = 2.8mΩ (Typ) @ VGS=-10V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Special process technology fo

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HM65P03D P-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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