HM6602 N & P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM6602 N and P-Channel Enhancement Mode Power MOSFET .
The HM6602 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

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HM6602 Datasheet Preview — Preview of HM6602 PDF

Datasheet Specifications

Part number: HM6602
Manufacturer: H&M Semiconductor
File Size: 1.09 MB
Datasheet: HM6602-HMSemiconductor.pdf
Description: N & P-Channel Enhancement Mode Power MOSFET

Features

* N-Channel VDS = 30V,ID = 3.6A RDS(ON) < 73mΩ @ VGS=4.5V RDS(ON)

Applications

* Load switch
* Power management SOT-23-L top view Package Marking and Ordering Information Device Marking Device Device Package HM6602 HM6602 SOT-23-6L Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter

HM6602 Distributors

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HM6602 P-Channel Enhancement Mode Power MOSFET H&M Semiconductor

H&M Semiconductor HM6602-like datasheet