HM6604 N & P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM6604 N and P-Channel Enhancement Mode Power MOSFET .
The HM6604 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

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Datasheet Specifications

Part number: HM6604
Manufacturer: H&M Semiconductor
File Size: 489.24 KB
Datasheet: HM6604-HMSemiconductor.pdf
Description: N & P-Channel Enhancement Mode Power MOSFET

Features

* N-Channel VDS = 20V,ID =3A RDS(ON) < 65mΩ @ VGS=4.5V RDS(ON) < 90mΩ @ VGS=2.5V
* P-Channel VDS = -20V,ID = -3A RDS(ON) < 110mΩ @ VGS=-4.5V RDS(ON) < 140mΩ @ VGS=-2.5V
* High power and current handing capability
* Lead free product is acquired
* Surface mount package N-channel

HM6604 Distributors

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HM6604 P-Channel Enhancement Mode Power MOSFET H&M Semiconductor

H&M Semiconductor HM6604-like datasheet