HM6604 - N & P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Datasheet Details

Part number	HM6604
Manufacturer	H&M Semiconductor
File Size	489.24 KB
Description	N & P-Channel Enhancement Mode Power MOSFET
Datasheet	HM6604-HMSemiconductor.pdf

The HM6604 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

N-Channel VDS = 20V,ID =3A RDS(ON) < 65mΩ @ VGS=4.5V RDS(ON) < 90mΩ @ VGS=2.5V.
P-Channel VDS = -20V,ID = -3A RDS(ON) < 110mΩ @ VGS=-4.5V RDS(ON) < 140mΩ @ VGS=-2.5V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package N-channel P-channel Marking and pin Assignment Package Marking and Ordering Information SOT-23-6L top view Device Marking Device Device Package Reel Size Tape width 20.
HM6604 SOT-23-6L Ø180.

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Published: Nov 27, 2018 |