HM80N03 - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The HM80N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =30V,ID =80A RDS(ON).

H&M Semiconductor

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Datasheet Details

Part number	HM80N03
Manufacturer	H&M Semiconductor
File Size	382.03 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM80N03 Datasheet
Additional preview pages of the HM80N03 datasheet.

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HM80N03 N-Channel Enhancement Mode Power MOSFET Description The HM80N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =80A RDS(ON) <6.

Published: Jun 30, 2025 |