HM80N06 Description
The HM80N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
HM80N06 Key Features
- VDS =60V,ID =80A RDS(ON) =6.0mΩ(Typ) @ VGS=10V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Load Switching