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HM80N06 Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

Overview: N-Channel Enhancement Mode Power MOSFET.

General Description

The HM80N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

General

Key Features

  • VDS =60V,ID =80A RDS(ON) =6.0mΩ(Typ) @ VGS=10V.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.

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HM80N06 Distributor