HM80N06
HM80N06 is N-Channel Enhancement Mode Power MOSFET manufactured by H&M Semiconductor.
N-Channel Enhancement Mode Power MOSFET
Description
The HM80N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS =60V,ID =80A RDS(ON) =6.0mΩ(Typ) @ VGS=10V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
Application
- PWM
- Load Switching
Schematic diagram Marking and pin Assignment
100% UIS TESTED! 100% ∆Vds TESTED!
TO-220 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
TO-220-3L
Reel Size
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