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HM80N03

Manufacturer: H&M Semiconductor

HM80N03 datasheet by H&M Semiconductor.

HM80N03 datasheet preview

HM80N03 Datasheet Details

Part number HM80N03
Datasheet HM80N03-HMSemiconductor.pdf
File Size 382.03 KB
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
HM80N03 page 2 HM80N03 page 3

HM80N03 Overview

The HM80N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

HM80N03 Key Features

  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high EAS
  • Excellent package for good heat dissipation
  • Power switching application
  • Hard switched and high frequency circuits
  • Uninterruptible power supply
  • Tape width
  • Quantity

HM80N03K from other manufacturers

View HM80N03K datasheet index

Brand Logo Part Number Description Other Manufacturers
H-M semi Logo HM80N03K N-Channel Power MOSFET H-M semi
H&M Semiconductor logo - Manufacturer

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HM80N03 Distributor

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