HM80N03
HM80N03 is N-Channel Enhancement Mode Power MOSFET manufactured by H&M Semiconductor.
N-Channel Enhancement Mode Power MOSFET
Description
The HM80N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS =30V,ID =80A RDS(ON) <6.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
Schematic diagram
Application
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
TO-220-3L
Reel Size
- Tape width
- Quantity
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