HMS50N10A N-Channel Super Trench Power MOSFET

H&M Semiconductor

Description

HMS50N10A N-Channel Super Trench Power MOSFET .
The HMS50N10A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

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Datasheet Specifications

Part number: HMS50N10A
Manufacturer: H&M Semiconductor
File Size: 917.27 KB
Datasheet: HMS50N10A-HMSemiconductor.pdf
Description: N-Channel Super Trench Power MOSFET

Features

* VDS =100V,ID =50A RDS(ON) =13.5mΩ(Typ) @ VGS=10V RDS(ON) =18.5mΩ(Typ) @ VGS=4.5V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating

HMS50N10A Distributors

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HMS50N10A N-Channel Super Trench Power MOSFET H&M Semiconductor

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