HMS50N10A Datasheet - H&M Semiconductor

HMS50N10A, N-Channel Super Trench Power MOSFET

HMS50N10A N-Channel Super Trench Power MOSFET .
The HMS50N10A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

HMS50N10A-HMSemiconductor.pdf

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Datasheet Details

Part number:

HMS50N10A

Manufacturer:

H&M Semiconductor

File Size:

917.27 KB

Description:

N-Channel Super Trench Power MOSFET

Features

* VDS =100V,ID =50A RDS(ON) =13.5mΩ(Typ) @ VGS=10V RDS(ON) =18.5mΩ(Typ) @ VGS=4.5V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating

HMS50N10A Distributors

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HMS50N10A N-Channel Super Trench Power MOSFET H&M Semiconductor

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