HMS5N80I N-Channel Super Junction Power MOSFET

H&M Semiconductor

Description

+061,+061. N-Channel Super Junction Power MOSFET Ⅲ General .
The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: HMS5N80I
Manufacturer: H&M Semiconductor
File Size: 594.78 KB
Datasheet: HMS5N80I-HMSemiconductor.pdf
Description: N-Channel Super Junction Power MOSFET

Features

* New technology for high voltage device
* Low on-resistance and low conduction losses
* Small package
* Ultra Low Gate Charge cause lower driving requirements
* 100% Avalanche Tested

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HMS5N80I N-Channel Super Junction Power MOSFET H&M Semiconductor

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