8810

Dual N-Channel Enhancement Mode Power MOSFET

H&M semi

8810 Features

* VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM

* High Power and current handing capability

* Lead free product is acquired

* Surface Mount Package Schematic diagram 8810 Marking and pin Assignment Marking and pin Assignment Applicatio

8810 Datasheet (673.17 KB)

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Part number:

8810

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H&M semi

File Size:

673.17 KB

Description:

Dual n-channel enhancement mode power mosfet.

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8810 Dual N-Channel Enhancement Mode Power MOSFET H&M semi

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8810 Features

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