Datasheet Details
- Part number
- 8810
- Manufacturer
- H&M semi
- File Size
- 673.17 KB
- Datasheet
- 8810-HMsemi.pdf
- Description
- Dual N-Channel Enhancement Mode Power MOSFET
8810 Description
HM8810E Dual N-Channel Enhancement Mode Power MOSFET .
The HM8810E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
8810 Features
* VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM
* High Power and current handing capability
* Lead free product is acquired
* Surface Mount Package
Schematic diagram
8810
Marking and pin Assignment
Marking and pin Assignment
Applicatio
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