8810 Datasheet - H&M semi

8810, Dual N-Channel Enhancement Mode Power MOSFET

HM8810E Dual N-Channel Enhancement Mode Power MOSFET .
The HM8810E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Details

Part number:

8810

Manufacturer:

H&M semi

File Size:

673.17 KB

Description:

Dual N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM
* High Power and current handing capability
* Lead free product is acquired
* Surface Mount Package Schematic diagram 8810 Marking and pin Assignment Marking and pin Assignment Applicatio

8810 Distributors

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8810 Dual N-Channel Enhancement Mode Power MOSFET H&M semi

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