HM730 - 400V N-Channel MOSFET
This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices ar
HM730 Features
* 6.0A, 400V, RDS(on) = 1.00Ω @VGS = 10 V
* Low gate charge ( typical 18nC)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability {D GDS TO-220 GD S TO-220F
* ◀▲ {G
* {S Absolute Maximum Ratings TC = 25°Cunless otherwis
