Part number:
HD8007
Manufacturer:
HAB Semiconductors
File Size:
583.01 KB
Description:
80c51-based microcontroller.
HD8007
80C51-based microcontroller
* 16K flash memory
* In-system programming
* IAP programming
* Main Data Memory: 25.
HD8007
HAB Semiconductors
583.01 KB
80c51-based microcontroller.
HD8007
80C51-based microcontroller
* 16K flash memory
* In-system programming
* IAP programming
* Main Data Memory: 25.
📁 Related Datasheet
HD8.2Mxx - (HD Series) HIGH-FREQ ALUMINUM ELECTROLYTIC
(NTE Electronics)
HIGH–FREQ ALUMINUM ELECTROLYTIC
HD SERIES
SUBMINIATURE (Radial Lead, Horizontal Deflection)
The NTE HD series of aluminum electrolytic non–polarized c.
HD814253FB - Multi2
(Hirotech)
..
DATA SHEET
HD814253FB ŒÝŠ· MULTI2 ƒfƒR•[ƒ_
No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
FPGA Xilinx Altera
Date 00/07/04 00/08/0.
HD8178232 - Digital Signal Processor
(ETC)
..
ee DataSh
.
.
DataSheet 4 U .
..
m et4U.co
ee DataSh
.
Data.
HD81803 - ADPCM TRANSCODER
(Hitachi Semiconductor)
..
.
.
.
DataSheet 4 U .
..
et4U.
.
DataSheet4.
HD8205 - Dual N-Channel MOSFET
(HI-DEVICE)
ÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿ
ÿÿÿ ÿÿÿÿÿÿ ÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿ.
HD8205-LOW - N-Channel Enhancement Mode Power MOSFET
(HI-DEVICE)
HD8205-LOW
N-Channel Enhancement Mode Power MOSFET
Description
The 8205-LOW uses advanced trench technology to provide excellent RDS(ON), low gate c.
HD8205A - N-Channel Enhancement Mode Power MOSFET
(HI-DEVICE)
HD8205A
N-Channel Enhancement Mode Power MOSFET
Description
The HD8205A uses advanced trench technology to provide excellent RDS(ON), low gate charg.
HD830 - 500V N-Channel MOSFET
(JINGJIAZHEN)
HD830_HU830
Electrical Characteristics TC=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS RDS(ON)
.
