BT258S-600R

SCRs

HAOPIN

BT258S-600R Features

* Blocking voltage to 800 V On-state RMS current to 8 A Ultra low gate trigger current SYMBOL VDRM IT RMS ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current full sine wave Non-repetitive peak on-state current (full cycle,Tj initial=25 ) 600R 800R Value 600 800 8 75 Unit V A A

BT258S-600R General Description

Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. Symbol Sim.

BT258S-600R Datasheet (361.72 KB)