C2312 - Silicon NPN POWER TRANSISTOR
Designed for RF power amplifier on HF band mobile radio applications.
T S C B F Q 1 2 3 A H U Z L R J STYLE 1: PIN 1.
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K Specified 12V, 27MHz Characteristics PO = 18.5W GP = 10.5 dB min.
at 18.5 W/27 MHz Emitter ballasted construction V BASE COLLECTOR EMITTER COLLECTOR G N D DIMEN
