Datasheet Details
- Part number
- C2312
- Manufacturer
- HGSemi
- File Size
- 275.71 KB
- Datasheet
- C2312-HGSemi.pdf
- Description
- Silicon NPN POWER TRANSISTOR
C2312 Description
G H .
Designed for RF power amplifier on HF band mobile radio applications.
C2312 Features
* HG RF POWER TRANSISTOR
Semiconductors
ROHS Compliance,Silicon NPN POWER TRANSISTOR
2SC2312
* T
C2312 Applications
* T S C
B
F
Q
1 2 3
A
H U Z L R J
STYLE 1: PIN 1. 2. 3. 4.
K
Specified 12V, 27MHz Characteristics PO = 18.5W GP = 10.5 dB min. at 18.5 W/27 MHz Emitter ballasted construction
V
BASE COLLECTOR EMITTER COLLECTOR
G N
D
DIMENSIONS
UNIT mm inches A 15.75 14.48 0.620 0.570 B 10.28 9.66 0.405 0.3
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