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C2312 - Silicon NPN POWER TRANSISTOR

C2312 Description

G H .
Designed for RF power amplifier on HF band mobile radio applications.

C2312 Features

* HG RF POWER TRANSISTOR Semiconductors ROHS Compliance,Silicon NPN POWER TRANSISTOR 2SC2312
* T

C2312 Applications

* T S C B F Q 1 2 3 A H U Z L R J STYLE 1: PIN 1. 2. 3. 4. K Specified 12V, 27MHz Characteristics PO = 18.5W GP = 10.5 dB min. at 18.5 W/27 MHz Emitter ballasted construction V BASE COLLECTOR EMITTER COLLECTOR G N D DIMENSIONS UNIT mm inches A 15.75 14.48 0.620 0.570 B 10.28 9.66 0.405 0.3

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Preview of C2312 PDF

Datasheet Details

Part number
C2312
Manufacturer
HGSemi
File Size
275.71 KB
Datasheet
C2312-HGSemi.pdf
Description
Silicon NPN POWER TRANSISTOR

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Silicon NPN POWER TRANSISTOR HGSemi
HGSemi C2312-like datasheet