C2312 Datasheet - HGSemi

C2312 Silicon NPN POWER TRANSISTOR

Designed for RF power amplifier on HF band mobile radio applications. T S C B F Q 1 2 3 A H U Z L R J STYLE 1: PIN 1. 2. 3. 4. K Specified 12V, 27MHz Characteristics PO = 18.5W GP = 10.5 dB min. at 18.5 W/27 MHz Emitter ballasted construction V BASE COLLECTOR EMITTER COLLECTOR G N D DIMEN.

C2312-HGSemi.pdf

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Datasheet Details

Part number:

C2312

Manufacturer:

HGSemi

File Size:

275.71 KB

Description:

Silicon npn power transistor.

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C2312 C2312 Silicon NPN POWER TRANSISTOR HGSemi

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