SFX3N50 Datasheet | HI-SEMICON

DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, VDMOS technology. Features - VDS=500V, ID=3A - RDS(ON) TYP:3.02Ω@VGS=10V ID=1.5A MAX:3.3Ω Applications - Power faction correction (PFC) - Switched mode power supplies (SMPS) - Uninterruptible power supply (UPS) - LED lighting power ORDERING INFORMATION Part No. SFF3N50 SFD3N50 Package TO-220F-3L TO-252-2L Marking SFF3N50 SFD3N50 Http://.hi-semicon. Material Pb free Pb free Packing Tube Reel Rev 1.0 Page 1 of 9 ABSOLUTE MAXIMUM RATINGS (TJ=25C unless otherwise noted) Characteristics Symbol Ratings SFF3N50 SFD3N50 Drain-Source Voltage Gate-Source Voltage ±30 TC = 25C Drain Current TC = 100C Drain Current Pulsed (Note 1) Power Dissipation(TC=25C)...