SFX3N50TS Overview
These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, VDMOS technology.
SFX3N50TS Key Features
- VDS(V)=500V, ID=3A -RDS(ON) TYP:3.5Ω@VGS=10V ID=1.5A MAX:3.8Ω
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | SFX3N50TS |
|---|---|
| Datasheet | SFX3N50TS SFX3N50TS-HI Datasheet (PDF) |
| File Size | 637.58 KB |
| Manufacturer | HI-SEMICON |
| Description | 500V N-CHANNEL POWER MOSFET |
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These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, VDMOS technology.
| Part Number | Description |
|---|---|
| SFX3N50 | 500V N-CHANNEL POWER MOSFET |
| SFX33N10 | 100V N-CHANNEL MOSFET |
| SFX18N50 | 500V N-CHANNEL MOSFET |
| SFX20N60 | 600V N-CHANNEL POWER MOSFET |
| SFX5N50 | 500V N-CHANNEL POWER MOSFET |
| SFX5N50TS | 500V N-CHANNEL POWER MOSFET |
| SFX6N60 | 600V N-CHANNEL MOSFET |
| SFX7N50 | 500V N-CHANNEL POWER MOSFET |