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SFX3N50 - 500V N-CHANNEL POWER MOSFET

This page provides the datasheet information for the SFX3N50, a member of the SFX3N50-HI 500V N-CHANNEL POWER MOSFET family.

Description

These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, VDMOS technology.

Features

  • VDS=500V, ID=3A.
  • RDS(ON) TYP:3.02Ω@VGS=10V ID=1.5A MAX:3.3Ω.

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Datasheet preview – SFX3N50

Datasheet Details

Part number SFX3N50
Manufacturer HI-SEMICON
File Size 600.07 KB
Description 500V N-CHANNEL POWER MOSFET
Datasheet download datasheet SFX3N50 Datasheet
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Full PDF Text Transcription

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3A, 500V N-CHANNEL POWER MOSFET GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, VDMOS technology. Features ◆VDS=500V, ID=3A ◆RDS(ON) TYP:3.02Ω@VGS=10V ID=1.5A MAX:3.3Ω Applications ◆Power faction correction (PFC) ◆Switched mode power supplies (SMPS) ◆Uninterruptible power supply (UPS) ◆LED lighting power SFX3N50 ORDERING INFORMATION Part No. SFF3N50 SFD3N50 Package TO-220F-3L TO-252-2L Marking SFF3N50 SFD3N50 Http://www.hi-semicon.com Material Pb free Pb free Packing Tube Reel Rev 1.
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