SFX3N50 Overview
These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, VDMOS technology.
SFX3N50 Key Features
- VDS=500V, ID=3A -RDS(ON) TYP:3.02Ω@VGS=10V ID=1.5A MAX:3.3Ω
Datasheet Details
| Part number | SFX3N50 |
|---|---|
| Datasheet | SFX3N50 SFX3N50-HI Datasheet (PDF) |
| File Size | 600.07 KB |
| Manufacturer | HI-SEMICON |
| Description | 500V N-CHANNEL POWER MOSFET |
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