SFX3N50
Description
These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, VDMOS technology.
Key Features
- VDS=500V, ID=3A
- RDS(ON) TYP:3.02Ω@VGS=10V ID=1.5A MAX:3.3Ω
Applications
- Power faction correction (PFC)
