Description
HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No.: 1/6 H02N60S Series N-Channel.
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time.
Features
* Robust High Voltage Termination
* Avalanc he Energy Specified
* Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast
Recovery Diode
* Diode is Characterized for Use in Bridge Circuits
* IDSS and VDS(on) Specified at Elevated Temperature
Absolute