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H02N60SI - N-Channel Power FET

This page provides the datasheet information for the H02N60SI, a member of the H02N60S-HI N-Channel Power FET family.

Datasheet Summary

Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time.

In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.

Features

  • Robust High Voltage Termination.
  • Avalanc he Energy Specified.
  • Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode.
  • Diode is Characterized for Use in Bridge Circuits.
  • IDSS and VDS(on) Specified at Elevated Temperature Absolute Maximum Ratings H02N60S Series Pin Assignment Tab 3 2 1 Tab 3 2 Tab 1 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source 3-Lead Plastic TO-251 Package Code: I Pin 1.

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Datasheet Details

Part number H02N60SI
Manufacturer HI-SINCERITY
File Size 73.78 KB
Description N-Channel Power FET
Datasheet download datasheet H02N60SI Datasheet
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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 H02N60S Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time.
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